PART |
Description |
Maker |
MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|
TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
SFH4552 SFH495P Q62702-P5054 Q62703-Q7891 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TLN11907 TLN119F TLN119 |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
SFH405 Q62702-P835 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
SFH401 |
GaAs INFRARED EMITTER
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
|
TLN117B TLN117 TLN117C TLN117A |
TOSHIBA INFRARED LED GAAS INFRAED EMITTER 东芝红外发光二极管公认审INFRAED发射
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳 GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
|
SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system GaAs Infrared Emitter Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|